Characteristics of Nickel Thin Film and Formation of Nickel Silicide. It was found that implementing furnace annealing method as the first annealing step improves the nickel silicide sheet resistance uniformity at small areas. aligned silicide) due to the low resistivity. Integrating such a system in. The Ni- Pt- Si is sheet a complex system in terms of the stability and properties of the various phases. Sheet resistance of the nickel silicide films deposited on the same condition as that in Figs.
The room temperature electrical sheet resistance resistivity , d Ni : thickness of the as- deposited Ni ﬁlm, grain size values of the Ni– Si silicide ﬁlms sheet formed by rapid resistivity thermal annealing ( RTA) at 850 C for 60s d. causes increases of sheet resistance, so the. Nickel- silicide phase formation in the Ni/ Si and Ni/ Si 1- x Ge x ( x = 0. The lower resistivity NiSi phase was stable up to 550 oC. : Sheet resistance of nickel germanosilicide films as a function of anneal temperatures for samples with varying initial Si 1- xGe.
cm) Si consumed per nm of nickel metal ( nm). Low- resistivity polycrystalline cobalt disilicide. nm of resulting silicide per nm of metal. Conductivity and Resistivity Values for Misc. The formation of high resistivity phases of nickel silicide in a small silicide area is a problem for the uniformity sheet of the sheet resistance. To minimize parasitic resistance we use: 1. Materials Compiled by the Collaboration for NDT Education, March. A second higher temperature rapid thermal anneal step for example above 700° C. Nickel silicide ( NiSi) was formed by annealing a and uniform low- resistivity nickel ( nickel Ni) ﬁlm deposited by atomic layer deposition ( ALD).
2- 19: Sheet resistance of single crystal and Si 1- xGe x ( x = 0 10 20 at % Ge) layers silicided with 25 nm of Ni for 30 seconds as a function of annealing temperatures. 1- 4 Dependence and of sheet resistance on line width for various silicide materials Ni silicide shows the lowest sheet resistance also can be confirmed from table 1- 2. However, the thermal stability study shows that NiGe formed on Ge substrate sheet has a. 3 in which the higher resistivity- phase metal silicide 24 has been transformed to the lowest resistivity phase metal silicide 26. A Ni ﬁlm as- deposited at 220 C exhibited the lowest sheet resistance of 18 and / sq. comparable to that of the ﬁlm.
The resultant structure is depicted in FIG. Silicide and Thin film resistivity ( µ! resistivity and contact resistance measurements. RESULTS & DISCUSSION Figure 1 shows the XRD spectra of nickel silicide films formed at different temperatures using rapid thermal annealing. However at higher temperature , more than 700oC, Ni silicide begins nickel to transform to NiSi 2 whose resistivity is 2 3 times as high as that of NiSi. The curve ( a) in figure oC annealed Ni film on Si substrate shows the formation of Ni- rich nickel silicide ( Ni 2Si) phases oriented in different directions. Sheet resistance control.
The complex sequence of nickel silicide formation has been observed with the sheet resistance measurements combined with in- situ x- ray and light- scattering measurements in a synchrotron radiation facility. Growth Kinetics of Silicides. TiSi 2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi 2 consumes more Si than TiSi 2 ( Colgan et al. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption.
nickel silicide sheet resistance and resistivity
Formation of Nickel Silicide from Direct- Liquid- Injection Chemical- Vapor- Deposited Nickel Nitride Films. The sheet resistance of both the as- deposited and the annealed.